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The crystal structure of this successfully synthesized material
Validation results
It has been experimentally confirmed that the resistance can be drastically increased by rotating the magnetic moment direction. It has also been found that the reciprocal of the normalized Hall resistivity stays as a half-integer (forming a platform).
A research team consisting of the University of Tokyo, Osaka University, Tohoku University, High Energy Accelerator Research Institute, and the Institute of Physical Chemistry announced on January 30, 2016 that it has discovered a new type of magnet that can use magnetic fields by enclosing Dirac electrons of zero mass. Greatly control the conductivity. It is said that it is expected to be applied to magnetic devices such as HDD heads and magnetoresistive memories (MRAMs) that can perform ultra-high-speed and energy-saving work.
The successful synthesis of a high-quality single-crystal layered material "EuMuBi2" is characterized by its crystalline structure, which consists of a ruthenium layer that bears the electronic state of Dirac and a layer that does not flow current based on gallium and manganese (barrier layer). ) Lamination. The barrier layer acts as a magnet. By controlling the orientation of the magnetic moment with an external magnetic field, the current of Dirac electrons can drastically change and be sealed in the enamel layer.
It was experimentally confirmed that when the magnetic moment direction of the crucible was rotated by 90 degrees, conduction in the vertical direction was reduced by nearly one digit, and Dirac electrons were strongly sealed in the plane. In addition, the half-integer quantum Hall effect is also shown in this state, and it is found that Dirac electrons basically meet the ideal two-dimensional system.
Most of the common electrons in metals and semiconductors move as particles with mass. In recent years, studies have found that in the single-atom layer (graphene) of graphite, electrons are conducted as particles with no mass, causing great concern in the industry. Dirac electrons in such solids have a high mobility of about 20 times or more that of silicon in graphene, and are expected to be used in high-speed and energy-saving electronics. (Special Contributor: Kudosuke)
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