Recently, researchers at the University of California, Davis, said they have developed a new method of manufacturing integrated circuit chips. This method combines semiconductor materials and nanowires and places them on the surface of the silicon material. According to the researchers, this approach will lead to a new generation of faster and more powerful electronic devices and optoelectronic devices.
Recently, the team used this technology to successfully make 3D nanowire transistors, and believes that this will create huge opportunities for the integration of raw materials such as gallium nitride on silicon substrates. Researchers are also able to make these nanowires work as transistors, combining them into more complex circuits and making photoreactors.
"Traditional silicon devices have reached their size downline, which severely limits the speed and integration density of electronic devices," said Professor Saif Ismal. In addition, conventional silicon circuits can no longer operate in environments exceeding 250°, nor can they handle high power, high voltage, and optical problems. "Si does not play any role," Professor Saif Ismal said.
He expects nanowire technology to be used to adapt to high temperature work, such as the manufacture of aircraft engine sensors. He also stated that “in the foreseeable future, society will rely on a variety of sensors and control systems that work in extreme environmentsâ€
He believes that devices containing silicon and non-silicon materials can achieve higher speeds and more powerful performance. To achieve this goal, Professor Saif Ismal's laboratory has developed silicon wafer materials containing “nanopillars†such as gallium arsenide, gallium nitride, and indium phosphide. “Silicon materials have encountered technical bottlenecks, but we can seek breakthroughs in nanowire technology,†he stressed.
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